Engineered defects in ferroelectric materials provides key to improved polariaztion stability, a significant step forward for domain-wall nanoelectronics in data storage. Researchers achieved stability greater than one year (a 2000% improvement).
from Top Technology News -- ScienceDaily https://ift.tt/2GebSKn
Wednesday, 22 January 2020
Designer-defect clamping of ferroelectric domain walls for more-stable nanoelectronics
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