LEDs made of indium gallium nitride provide better luminescence efficiency than many of the other materials used to create blue and green LEDs, but a big challenge of working with InGaN is its known dislocation density defects that make it difficult to understand its emission properties. Researchers report an InGaN LED structure with high luminescence efficiency and what is believed to be the first direct observation of transition carriers between different localization states within InGaN.
from Top Technology News -- ScienceDaily https://ift.tt/2ZCIDwd
Wednesday, 4 September 2019
Future of LEDs Gets Boost from Verification of Localization States in InGaN Quantum Wells
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