Scientists have developed the world's best-performing pure spin current source made of bismuth-antimony (BiSb) alloys, which they report as the best candidate for the first industrial application of topological insulators. The achievement represents a big step forward in the development of spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices with the potential to replace existing memory technologies.
from Top Technology News -- ScienceDaily https://ift.tt/2At5jDE
Tuesday 31 July 2018
A colossal breakthrough for topological spintronics
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